FQB50N06LTM
Manufacturer:
On Semiconductor
Mfr.Part #:
FQB50N06LTM
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT N-Channel number of channels:1 3.75 W 60 V Continuous Drain Current (ID):52.4 A 32 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 60 V |
| Length | 10.67 mm |
| Width | 9.65 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 4.83 mm |
| Packaging | Reel |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 52.4 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 3.75 W |
| Power Dissipation | 3.75 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Input capacitance | 1.63 nF |
| Continuous Drain Current (ID) | 52.4 A |
| Rds On Max | 21 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 80 ns |
| Element Configuration | Single |
| Fall Time | 145 ns |
| Rise Time | 380 ns |
| Gate Charge | 32 nC |
| Drain to Source Resistance | 21 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1 V |
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